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Correlation between Physical Defects and Performance in AlGaN,GaN High Electron Mobility Transistor Devices

소개글 Author: Park Seong-Yong, Lee Tae_Hun, Kim Moon-J. Organization: Park Seong-Yong; Lee Tae_Hun; Kim Moon-J. Publish: Transactions on Electrical and Electronic Materials Volume 11, Issue2, p49~53, 25 Apr 2010
태그
  • AlGaN/GaN
  • High electron mobility transistor
  • Reliability
  • Photon emission microscopy
  • Leakage current

저작시기 2010-04월

등록일 2016-07-14

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