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Effect of MIM and n-Well Capacitors on Programming Characteristics of EEPROM

소개글 Author: Lee Chan-Soo, Cui Zhi-Yuan, Jin Hai-Feng, Sung Si-Woo, Lee Hyung-Gyoo, Kim Nam-Soo Organization: Lee Chan-Soo; Cui Zhi-Yuan; Jin Hai-Feng; Sung Si-Woo; Lee Hyung-Gyoo; Kim Nam-Soo Publish: Transactions on Electrical and Electronic Materials Volume 12, Issue1, p35~39, 28 Feb 2011
태그
  • Metal-insulator-metal capacitor
  • N-well capacitor
  • Floating gate
  • Electrically erasable programmable read-only memory