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Characterization of Ultra Low-k SiOC(H) Film Deposited by Plasma-Enhanced Chemical Vapor Deposition (PECVD)

소개글 Author: Kim Sang-Yong Organization: Kim Sang-Yong Publish: Transactions on Electrical and Electronic Materials Volume 13, Issue2, p69~72, 25 Apr 2012
태그
  • Metal?oxide?semiconductor field-effect transistor
  • lateral asymmetric channel doping