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Scaling Rules for Multi-Finger Structures of 0.1-μm Metamorphic High-Electron-Mobility Transistors

소개글 Author: Ko Pil-Seok, Park Hyung-Moo Organization: Ko Pil-Seok; Park Hyung-Moo Publish: Journal of electromagnetic engineering and science Volume 13, Issue2, p127~133, 30 June 2013
태그
  • Scaling Rule
  • HEMT
  • Small-Signal Parameters
  • Gate Width