Effect of Sputtering Power on the Change of Total Interfacial Trap States of SiZnSnO Thin Film Transistor

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Effect of Sputtering Power on the Change of Total Interfacial Trap States of SiZnSnO Thin Film Transistor

소개글 Author: Ko Kyung-Min, Lee Sang Yeol Publish: Transactions on Electrical and Electronic Materials Volume 15, Issue6, p328~332, 25 Dec 2014

태그

RF magnetron sputtering
Activation energy
Total interfacial trap state
Sputtering power
Amorphous structure

저작시기 2014-12월

등록일 2016-07-20

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